Spintronic oxides grown by laser-MBE
نویسندگان
چکیده
منابع مشابه
MBE-grown long wavelength InGaAlAs/InP laser diodes
An attempt was made to achieve high-performance 1.55I m semiconductor laser diodes based on the InGaAlAs material system with solid-source molecular beam epitaxy (MBE) technology. The primary motivation for this attempt was the possibility for enhanced QW laser performance with large conduction band offsets provided by InGaAlAs which, furthermore, can be realized with toxic-gas-free solid-sourc...
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We demonstrate the first 1.5 mm GaInNAsSb laser grown on GaAs. It exhibits much improved threshold current density as compared with previously reported GaInNAs lasers at 1.52 mm. A 1.465mm laser with far superior performance is also demonstrated. This device exhibits a pulsed threshold current density of 930A/cm per quantum well, a differential quantum efficiency of 0.30W/A (both facets), an ex...
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We measured the ellipsometric response from 0.7-5.4 eV of c-axis oriented AlN on Si (111) grown by molecular beam epitaxy. We determine the film thicknesses and find that for our AlN the refractive index is about 5-10% lower than in bulk AlN single crystals. Most likely, this discrepancy is due to a low film density (compared to bulk AlN), based on measurements using Rutherford backscattering. ...
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ژورنال
عنوان ژورنال: Journal of Physics D: Applied Physics
سال: 2011
ISSN: 0022-3727,1361-6463
DOI: 10.1088/0022-3727/45/3/033001